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Features
* No External Components Except PIN Diode * Supply-voltage Range: 4.5V to 5.5V * Highest Sensitivity Due to Automatic Sensitivity Adaption (AGC) and Automatic Strong
Signal Adaption (ATC)
* Highest Immunity Against Disturbances from Daylight and Lamps * Available for Carrier Frequencies between 30 kHz to 76 kHz; Adjusted
by Zener Diode Fusing
* TTL and CMOS Compatible * Suitable Minimum Burst Length 10 Pulses/Burst
Applications
* Home Entertainment Applications (Audio/Video) * Home Appliances * Remote Control Equipment
IR Receiver ASSP T2525
1. Description
The IC T2525 is a complete IR receiver for data communication that was developed and optimized for use in carrier-frequency-modulated transmission applications. The IC offers highest sensitivity as well as highest suppression of noise from daylight and lamps. The T2525 is available with broadest range of carrier frequencies (30, 33, 36, 37, 38, 40, 44, 56, 76 kHz) and 5 different noise suppression regulation types (standard, lamp, noise, short burst, data rate) covering requirements of high-end remote control solutions (please refer to selection guide available for T2525/ATA2526). The T2525 operates in a supply voltage range of 4.5V to 5.5V. The function of T2525 can be described using the block diagram (see Figure 1-1 on page 2). The input stage meets two main functions. First, it provides a suitable bias voltage for the PIN diode. Secondly, the pulsed photo-current signals are transformed into a voltage by a special circuit which is optimized for low-noise applications. After amplification by a Controlled Gain Amplifier (CGA), the signals have to pass a tuned integrated narrow bandpass filter with a center frequency f0 which is equivalent to the chosen carrier frequency of the input signal. The demodulator is used to convert the input burst signal into a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be suppressed at the output pin. All this is done by means of an integrated dynamic feedback circuit which varies the gain as a function of the present environmental condition (ambient light, modulated lamps etc.). Other special features are used to adapt to the current application to secure best transmission quality.
4657G-AUTO-09/09
Figure 1-1.
Block Diagram
VS
IN Input
CGA and filter
OUT Demodulator
Microcontroller
Oscillator Carrier frequency f0
AGC/ATC and digital control
T2525
Modulated IR signal min 6 or 10 pulses GND
2. Pin Configuration
Figure 2-1. Pinning SO8 and TSSOP8
VS NC OUT NC 1 2 3 4 8 7 6 5 NC NC GND IN
Table 2-1.
Pin 1 2 3 4 5 6 7 8
Pin Description
Symbol VS NC OUT NC IN GND NC NC Function Supply voltage Not connected Data output Not connected Input PIN diode Ground Not connected Not connected
2
T2525
4657G-AUTO-09/09
T2525
3. Absolute Maximum Ratings
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Supply voltage Supply current Input voltage Input DC current at VS = 5V Output voltage Output current Operating temperature Storage temperature Power dissipation at Tamb = 25C Symbol VS IS VIN IIN VO IO Tamb Tstg Ptot Value -0.3 to +6 3 -0.3 to VS 0.75 -0.3 to VS 10 -25 to +85 -40 to +125 30 Unit V mA V mA V mA C C mW
4. Thermal Resistance
Parameter Junction ambient SO8 Junction ambient TSSOP8 Symbol RthJA RthJA Value 130 150 Unit K/W K/W
3
4657G-AUTO-09/09
5. Electrical Characteristics
Tamb = 25C, VS = 5V unless otherwise specified. No. 1 1.1 1.2 2 2.1 2.2 2.3 2.4 3 3.1 3.2 Parameters Supply Supply-voltage range Supply current Output Internal pull-up resistor(1) Output voltage low Output voltage high Output current clamping Input Input DC current Input DC current; Figure 6-2 on page 6 VIN = 0; see Figure 6-7 on page 8 VIN = 0; Vs = 5V, Tamb = 25C Test signal: see Figure 6-6 on page 8 VS = 5V, Tamb = 25C, IIN_DC = 1 A; square pp, burst N = 16, f = f0; tPER = 10 ms, Figure 6-6 on page 8; BER = 50(2) 5 5 IIN_DCMAX IIN_DCMAX -85 -530 -960 A A C B R2 = 0; see Figure 6-7 on page 8 Tamb = 25C; see Figure 6-7 on page 8 IL = 2 mA; see Figure 6-7 on page 8 1,3 3,6 3,1 3,6 RPU VOL VOH IOCL VS - 0.25 8 30/40 250 Vs k mV V mA A B B B IIN = 0 1 1 VS IS 4.5 0.8 5 1.1 5.5 1.4 V mA C B Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
3.3
Minimum detection threshold current; Figure 6-1 on page 6
3
IEemin
-500
pA
B
3.4
Test signal: see Figure 6-6 on page 8 VS = 5V, Minimum detection Tamb = 25C, threshold current with IIN_DC = 1 A, AC current disturbance square pp, IIN_AC100 = 3 A at burst N = 16, 100 Hz f = f0; tPER = 10 ms, Figure 6-6 on page 8; BER = 50%(2) 1. Depending on version, see "Ordering Information"
3
IEemin
-750
pA
C
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 2. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 3. After transformation of input current into voltage
4
T2525
4657G-AUTO-09/09
T2525
5. Electrical Characteristics (Continued)
Tamb = 25C, VS = 5V unless otherwise specified. No. Parameters Test Conditions Test signal: see Figure 6-6 on page 8 VS = 5 V, Tamb = 25C, IIN_DC = 1 A; square pp, burst N = 16, f = f0; tPER = 10 ms, Figure 6-6 on page 8; BER = 5%(2) Pin Symbol Min. Typ. Max. Unit Type*
3.5
Maximum detection threshold current with VIN > 0V
3
IEemax
-400
A
D
4 4.1 4.2 4.3 4.4 4.5
Controlled Amplifier and Filter Maximum value of variable gain (CGA) Minimum value of variable gain (CGA) Total internal amplification(3) Center frequency fusing VS = 5V, Tamb = 25C accuracy of bandpass Overall accuracy center frequency of bandpass BPF bandwidth: type N0 - N3 BPF bandwidth: type N6, N7 -3 dB; f0 = 38 kHz; see Figure 6-4 on page 7 -3 dB; f0 = 38 kHz Figure 6-4 on page 7 GVARMAX GVARMIN GMAX f0_FUSE f0 B B -3 -6.7 51 -5 71 f0 f0 3.5 5.4 +3 +4.1 dB dB dB % % kHz kHz D D D A C C C
4.6
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. Depending on version, see "Ordering Information" 2. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 3. After transformation of input current into voltage
5.1
ESD
All pins 2000V HBM; 200V MM, MIL-STD-883C, Method 3015.7
5.2
Reliability
Electrical qualification (1000h) in molded SO8 plastic package
5
4657G-AUTO-09/09
6. Typical Electrical Curves at Tamb = 25C
Figure 6-1. IEemin versus IIN_DC, VS = 5V
100
IEemin (nA)
10
1 0.52 0 0.1
0.96
1.0
10.0
100.0
1000.0
IIN_DC (A)
Figure 6-2.
VIN versus IIN_DC, VS = 5V
3 2.94 2.79 2.44 2
VIN (V)
1
1.14
0 0.0
0.1
1.0
10.0
100.0
1000.0
IIN_DC (A)
Figure 6-3.
Data Transmission Rate, VS = 5V
5000 4634
Short burst type
4000 3415
Standard type
Bits/s
3000
2836
Lamp type
2000
2090 1373
1863
1000
0 25 35 45 55 65 75 85
f0 (kHz)
6
T2525
4657G-AUTO-09/09
T2525
Figure 6-4. Typical Bandpass Curve
1.1 1.0
Relative Amplitude
0.9 0.8 -3 dB 0.7 0.6 0.5 f 0.4 0.92 0.94 0.96 0.98 1.00 1.02 1.04 1.06 1.08 -3 dB
f/f0
Q = f0/f; f = -3 dB values. Example: Q = 1/(1.047 - 0.954) = 11
Figure 6-5.
Illustration of Used Terms
1066 s 533 s Burst (N = 16 pulses) Period (P = 16)
IN
1 7 16 7 7
33 s
OUT
t DON
tDOFF Envelope 1
533 s Envelope 16 17056 s/data word
OUT
Telegram pause Data word 17 ms TREP = 62 ms Data word
t
Example: f = 30 kHz, burst with 16 pulses, 16 periods
7
4657G-AUTO-09/09
Figure 6-6.
Test Circuit
I Ee = U1/400 k U1 1 nF 400 k V DD = 5V
IIN_DC
R1 = 220
VS IIN 20 k IEe 1 nF U2 IN T2525 GND OUT
VPULSE
20 k f0 16 IIN_AC100
I IN_DC = U2/40 k
C1 4.7 F
+
DC
+
tPER = 10 ms
Figure 6-7.
Application Circuit
VDD = 5V
(1)
optional
R1 = 220 IS VS IOCL OUT IL RPU
R2(1) > 2.4 k
IIN
IN
T2525
Microcontroller
GND
+
IIN_DC IEe C1 = 4.7 F
VIN
VO C 2(1) = 470 pF
8
T2525
4657G-AUTO-09/09
T2525
7. Chip Dimensions
Figure 7-1. Chip Size in m
1130,1030 GND 351,904 IN 723,885
scribe
VS
length
63,660
T2525
63,70 OUT
0,0
Fusing
width
Note: Pad coordinates are for lower left corner of the pad in m from the origin 0,0
Dimensions
Length inclusive scribe Width inclusive scribe Thickness Pads Fusing pads
1.15 mm 1.29 mm 290 5% 90 x 90 70 x 70 AlCu/AlSiTi(1) 0.8 m Si3N4/SiO2 0.7/0.3 m
Pad metallurgy
Material Thickness
Finish
Material Thickness
Note:
Value depends on manufacture location.
9
4657G-AUTO-09/09
8. Ordering Information
Delivering: unsawn wafers (DDW) in box. Extended Type Number T2525S0xx C-DDW T2525S1xx C-DDW T2525S2xx(1)C-DDW T2525S3xx(1)C-DDW T2525S6xx(1)C-DDW T2525S7xx C-DDW Notes:
(1) (1) (1)
PL(2) 2 1 2 1 2 1
RPU(3) 30 30 40 40 30 30
D(4) 2090 2090 1373 1373 3415 3415
Type(5) Standard type: 10 pulses, enhanced sensibility, high data rate Standard type: 10 pulses, enhanced sensibility, high data rate Lamp type: 10 pulses, enhanced suppression of disturbances, secure data transmission Lamp type: 10 pulses, enhanced suppression of disturbances, secure data transmission Short burst type: 6 pulses, enhanced data rate Short burst type: 6 pulses, enhanced data rate
1. xx means the used carrier frequency value f0 30, 33, 36, 38, 40, 44, 56 kHz. (76 kHz type on request) 2. Two pad layout versions (see Figure 9-1 and Figure 9-2) available for different assembly demand 3. Integrated pull-up resistor at pin OUT (see "Electrical Characteristics") 4. Typical data transmission rate up to bit/s with f0 = 56 kHz, VS = 5V (see Figure 6-3 on page 6) 5. On request: noise type, data rate type
9. Pad Layout
Figure 9-1. Pad Layout 1
GND IN
OUT
T2525
VS
Fusing
Figure 9-2.
Pad Layout 2
(6)
GND
(5)
IN
(1)
VS
T2525
(3)
OUT
Fusing
10
T2525
4657G-AUTO-09/09
T2525
10. Revision History
Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this document. Revision No. 4657G-AUTO-09/09 History * Put datasheet in newest template * Ordering Information table changed * * * * Features on page 1 changed Applications on page 1 changed Section 1 "Description" on page 1 changed Section 5 "Electrical Characteristics" number 3.3 and 3.4 on page 4 changed * Section 8 "Ordering Information" on page 10 changed * Section 9 "Pad Layout" on page 10 changed * Put datasheet in a new template * Section 8 "Ordering Information" on page 10 changed
4657F-AUTO-10/06
4657E-AUTO-04/06
11
4657G-AUTO-09/09
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4657G-AUTO-09/09

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